Confinement of secondary electrons in plasma ion processing
US5498290A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1993 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Aug 27, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/026
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma ion implantation apparatus includes a vacuum chamber that receives the object within its walls. The object is supported upon an electrically conductive base that is electrically isolated from the wall of the vacuum chamber. An electrically conductive enclosure is positioned between the object and the wall of the vacuum chamber and supported upon the base. The enclosure is made of an electrically conductive material. A plasma source is positioned so as to create a plasma in the vicinity of the object to be implanted. A voltage source applies an electrical voltage to the base and thence the enclosure relative to the wall of the vacuum chamber. Secondary electrons emitted from the object during implantation are reflected back into the plasma by the enclosure, reducing X-ray production and improving plasma efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.