Method of making SRAM to improve interface state density utilizing PMOS TFT
US5498557A · kind A · utility
15Cited by
2References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1994 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Apr 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor in which a device active layer is formed on an insulation film. In which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.