Method of manufacturing semiconductor device
US5498572A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1994 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Sep 30, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device including forming an electrode on a part of a semiconductor substrate, depositing an insulating film on the semiconductor substrate and on the electrode, and forming a contact hole penetrating through the insulating film to expose a part of the electrode; forming a barrier metal layer on the electrode in the contact hole, on the internal side surface of the contact hole, and on the surface of the insulating film; and depositing a metal layer on the barrier metal layer and patterning the metal layer and the barrier metal layer to form a wiring layer wherein the barrier metal layer comprises a metal that does not form an intermetallic material by solid state diffusion with either of the electrode and the metal layer even at elevated temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.