Modulation circuit
US5498885A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1994 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Sep 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/411
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit is provided with particular application for high frequency modulation circuits, such as a mixer circuit, with reduced noise and gain. The circuit provides a novel application of a single device comprising a 4 or 5 terminal, gate controlled lateral bipolar junction transistor device, in the form of a merged MOS and lateral bipolar transistor. In a grounded base configuration, RF and LO signals are applied to the gate and emitter terminals respectively and provide for modulated output at the collector, and provides signal modulation with reduced noise compared with multi-device implementations of known mixer circuits using a summation circuit, diodes and FETs. Advantageously, operation of the device in the grounded base or grounded emitter configuration provides for strong modulation of the DC current gain, i.e. over 4 decades, as a function of gate voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.