Output circuit device for a charge transfer element having tripartite diffusion layer
US5498887A · kind A · utility
13Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1995 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Feb 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A first diffusion layer in which phosphor of a low concentration is diffused is formed in a semiconductor body, and a second diffusion layer in which arsenic or antimony of a high concentration is formed in a portion of the upper face of the first diffusion layer. Further, a third diffusion layer in which phosphor of a high concentration is formed in the range of the second diffusion layer on the surface of the semiconductor body in a deeper condition than the first diffusion layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.