Spiral resistor integrated on a semiconductor substrate
US5498899A · kind A · utility
23Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 8, 1994 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Aug 8, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A spiral resistor being of a type formed on a semiconductor substrate to withstand high voltages, comprises at least one thin field-plate layer covering said substrate between adjacent turns of the resistor. This prevents the well-known phenomenon of the "phantom gate" from occurring which would result in the characteristics of spiral resistors deteriorating over time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.