Semiconductor device and method of manufacturing such semiconductor device
US5498909A · kind A · utility
9Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1992 |
| Grant date | Mar 12, 1996 |
| Priority date | — |
| Expiry date | Aug 31, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.