Method of making high performance capacitors and/or resistors for integrated circuits
US5500387A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1994 |
| Grant date | Mar 19, 1996 |
| Priority date | — |
| Expiry date | Feb 16, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A method of making an integrated circuit containing a capacitor comprising the steps of providing a semiconductor substrate having an active region and an oxide region on the substrate defining the active region, forming a mask on the active region, forming a region of heavily doped polysilicon on the oxide region having a doping level of from about 10 to about 15 ohms/square, removing the mask from the active region, commencing fabrication of an active device in the active region, forming a layer of electrically insulating material over the region of heavily doped polysilicon and a layer of electrically insulating material over the active region, forming a layer of heavily doped polysilicon having a doping level of from about 10 to about 15 ohms/square on the electrically insulating material to complete fabrication of the capacitor and on the active region and completing fabrication of an active device in the active region. More than one capacitor can be formed, this being accomplished by concurrently duplication of the above described process of forming a capacitor on another region of the substrate. The capacitors can have different capacitance by enlarging the insulating layer …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.