Method for making a semiconductor device including diffusion control
US5500391A · kind A · utility
6Cited by
10References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1994 |
| Grant date | Mar 19, 1996 |
| Priority date | — |
| Expiry date | Aug 9, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for making a MOS device on a silicon substrate includes the step of forming a buried layer of germanium-silicon alloy in the substrate, or, alternatively, a buried layer of silicon enclosed between thin, germanium-rich layers. This buried layer is doped with boron, and tends to confine the boron during annealing and oxidation steps. The process includes a step of exposing the substrate to an oxidizing atmosphere such that an oxide layer 10 .ANG.-500 .ANG. thick is grown on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.