Gallium arsenide MESFET imager
US5500522A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1994 |
| Grant date | Mar 19, 1996 |
| Priority date | — |
| Expiry date | May 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A pixel comprises a Field Effect Transistor formed on a gallium arsenide substrate wherein a source (1) of the field effect transistor is a photoresponsive element, a gate of the field effect transistor is shielded from light and acts as a switch to enable/disable readout and a drain (4) of the field effect transistor is connected to a readout line. Also disclosed an X-Y imager formed on a gallium arsenide substrate from a plurality of pixels and a processing area wherein each pixel comprises a photoresponsive source (1), a gate formed from a plurality of metal fingers (7) across the source (1), a drain (4) connected to a readout line and a gate resistor (12) connected in series with the fingers (7). The arrangement of fingers (7) across the source (1) in co-operation with the gate resistor (12) produces an enhanced optical gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.