Method of making the compound CuInSe.sub.2
US5501786A · kind A · utility
27Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1995 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Feb 3, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making the compound CuInSe.sub.2 (CIS) by depositing a precursor of the compound at least partly electrolytically on a substrate and forming CuInSe.sub.2 by thermal reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.