High density LED arrays with semiconductor interconnects
US5501990A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1995 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Apr 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A high density LED array with semiconductor interconnects includes a plurality of layers of material stacked on a substrate including a conductive layer, a first carrier confinement layer, an active layer, and a second carrier confinement layer. The layers are separated into isolated LEDs in a matrix of rows and columns with the conductive layer connecting a first electrode of each LED in a column to a first electrode of each other LED in the column. Row conductors connect a second electrode of each LED in a row to a second electrode of each other LED in the row and column conductors are connected to the conductive layer of each column.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.