Method for heat treating a semiconductor substrate to reduce defects
US5502010A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1993 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Jul 15, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of processing a semiconductor substrate includes the step of subjecting a semiconductor substrate to a heat treatment under a gaseous atmosphere. The method comprises the step of subjecting a semiconductor substrate to a high temperature heat treatment at temperatures not lower than 1100.degree. C. under a non-oxidizing atmosphere, wherein heat treatments before the high temperature heat treatment applied to the semiconductor substrate are applied under heat treating temperatures and heat treating time which fall within a region defined by a line connecting four points of (900.degree. C., 4 minutes), (800.degree. C., 40 minutes), (700.degree. C., 11 hours) and (600.degree. C., 320 hours) in a graph, in which the heat treating temperature is plotted on the abscissa and the heat treating time is plotted on the ordinate of the graph.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.