Semiconductor laser device
US5502739A · kind A · utility
7Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1995 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | Mar 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3409
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.