Article comprising a semiconductor waveguide structure
US5502787A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1995 |
| Grant date | Mar 26, 1996 |
| Priority date | — |
| Expiry date | May 22, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3402
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Articles according to the invention include a semiconductor waveguide having a core and a cladding, with the cladding including doped semiconductor material. The doping level is selected such that both the real part n and the imaginary part k of the complex refractive index of the doped material are relatively low, exemplarily n<0.5 .epsilon..sub..infin..sup.1/2 and k<1, where .epsilon..sub..infin. is the high frequency lattice dielectric constant of the material. Appropriate choice of the doping level can result in improved confinement of the guided radiation without undue increase in the attenuation of the guided radiation. The invention exemplarily is embodied in a long wavelength (.about.8.5 .mu.m) quantum cascade laser. Other embodiments are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.