Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
US5504347A · kind A · utility
63Cited by
3References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 17, 1994 |
| Grant date | Apr 2, 1996 |
| Priority date | — |
| Expiry date | Oct 17, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.