Semiconductor accelerometer
US5504356A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1993 |
| Grant date | Apr 2, 1996 |
| Priority date | — |
| Expiry date | Nov 16, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/0802
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof. An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.