Electrostatic discharge protection device

US5504362A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mario M. Pelella · Mountain View, US
• Ralph W. Young · Poughkeepsie, US
• Giovanni Fiorenza · Pomona, US
• Mary J. Saccamango · Poughquag, US

Key dates

• Filing date: Sep 14, 1994
• Grant date: Apr 2, 1996
• Expiry date: Sep 14, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/60

Abstract

A thick-oxide ESD transistor for a BiCMOS integrated circuit has its source/drain contacts formed of the BiCMOS base or emitter polysilicon and its source/drain formed by an outdiffusion of the respective polysilicon contact. In one embodiment the BiCMOS resistor doping deepens the ESD source/drains, and in another embodiment the BiCMOS collector reach through doping deepens the ESD source/drains. The entire ESD transistor is fabricated from a standard BiCMOS process without any additional steps, has an area of about 100 square microns, can shunt up to 6000 volts, and has a turn-on time of about 10 picoseconds.