Doped diamond laser
US5504767A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1995 |
| Grant date | Apr 2, 1996 |
| Priority date | — |
| Expiry date | Mar 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/163
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A solid state laser is provided having as the laser medium diamond and an optically active dopant element which is found to lase in the solid matrix. The dopant is preferably titanium, vanadium, chromium, iron, cobalt, nickel, zinc, zirconium, niobium, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, mercury, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and uranium. Erbium is especially preferred. The laser medium is formed as dopants are added by ion implantation to a diamond crystal as the diamond is grown by chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.