Patent · US Expired

Method for the production of reflectors

US5505805A · kind A · utility

5Cited by

12References

17Claims

0Family size

Assignee

INDUSTRIEANLAGEN-BETRIEBSGESELLSCHAFT MBH · DE

Inventors

Ulrich Papenburg · Egmating, DE
Peter Goedtke · Munich, DE
Ernst Blenninger · Munich, DE

Key dates

Filing date	Mar 2, 1993
Grant date	Apr 9, 1996
Priority date	—
Expiry date	Mar 2, 2013

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T156/10
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

For the production of lightweight reflectors or mirror structures, metallic silicon of sufficient thickness is applied to a CFC or CMC substrate preform structure having the dimensions of the component to be produced by a heat treatment process, in particular at temperatures between 1300.degree. C. and 1600.degree. C. and in a vacuum or in a protective atmosphere. In this way, reflectors or mirror structures are formed directly. It is possible to work at temperatures of 300.degree.-600.degree. C. when the silicon is applied in the form of wafers which are joined to the substrate preform by way a zone of a melt eutectic incorporating a nonferrous metal. Preferably the nonferrous metal is gold.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.