Method for manufacturing semiconductor device
US5506168A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1994 |
| Grant date | Apr 9, 1996 |
| Priority date | — |
| Expiry date | Oct 11, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device of the present invention has the step of forming an insulation material on a main surface of a semiconductor substrate. A groove is formed to extend from the surface of the material film to the substrate. The groove is buried with a first insulation film. By use of the first insulation film as an etching mask, the material film is removed, so that a projecting portion projecting to the first insulation film from the main surface can be obtained. A second insulation film is formed on a side surface or the projecting portion in a slope shape, which is from the top portion of the projecting portion to the main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.