Electromagnetic wave detector with quantum well structure
US5506418A · kind A · utility
21Cited by
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11Claims
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Key dates
| Filing date | Mar 21, 1995 |
| Grant date | Apr 9, 1996 |
| Priority date | — |
| Expiry date | Mar 21, 2015 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An electromagnetic wave detector formed of semiconductor materials includes at least one quantum well in which there is provided a fine layer of a material with a gap width that is smaller than that of the quantum well layer. For example, in the case of a GaAlAs/GaAs/GaAlAs, there is provision for a fine layer of InAs. In this way, the difference of energy levels between the two permitted levels is increased and detection of short wavelengths may be accomplished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.