Semiconductor laser
US5506855A · kind A · utility
1Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1994 |
| Grant date | Apr 9, 1996 |
| Priority date | — |
| Expiry date | Nov 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/327
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y compound semiconductor where 0.ltoreq.x<1 and 0.ltoreq.y.ltoreq.1 excluding ranges of 1.2y-2.2x.gtoreq.1, 1.3y-3.9x.gtoreq.1, x.gtoreq.0, and y.ltoreq.1 by an n-type cladding layer and a p-type cladding layer from opposite sides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.