Tantalum compound, process of producing the same, and material for forming tantalum oxide films
US5508063A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1994 |
| Grant date | Apr 16, 1996 |
| Priority date | — |
| Expiry date | Nov 29, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A novel tantalum compound represented by the formula (1): Ta(CH.sub.3).sub.3 (OR).sub.2, wherein R is an alkyl group having from 2 to 7 carbon atoms. The novel tantalum compound is produced by reacting a haloalkoxytantalum compound represented by the formula (2): TaX.sub.n (OR).sub.5-n, wherein X is halogen, R is an alkyl group having from 2 to 7 carbon atoms, and n is an integer of from 0 to 4, with a methylmetal compound; and recovering the tantalum compound represented by the above formula (1) by reduced pressure distillation. The tantalum compound has a high vapor pressure and permits effective formation of a uniform film of tantalum oxide with good properties by a CVD method. Therefore, the tantalum compound is very useful for manufacturing semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.