Method for forming capacitor element of DRAM
US5508221A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 1, 1994 |
| Grant date | Apr 16, 1996 |
| Priority date | — |
| Expiry date | Dec 1, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A stacked capacitor element for a DRAM cell is formed as follows. After a naturally oxidized film on a surface of a polycrystalline silicon film is removed, the polycrystalline silicon film is subjected to a rapid thermal nitriding treatment using lamp annealing so that a capacitor lower electrode of the capacitor element is formed. A tantalum oxide film is deposited on the polycrystalline silicon film and then densified so that a dielectric film of the stacked capacitor element is formed. A conductive film is formed on the tantalum oxide film and patterned. The conductive film is nittided so that a capacitor upper electrode is formed. The capacitor element thus formed enables the suppression of reduction in the capacitance value of the capacitor element of a DRAM and deterioration of the leakage current characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.