Method for manufacturing semiconductor visible laser diode
US5508225A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 1994 |
| Grant date | Apr 16, 1996 |
| Priority date | — |
| Expiry date | Mar 28, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for manufacturing a semiconductor laser diode, producing visible light after growing a p type GaAs contact layer on a p type AlGaInP cladding layer, an n type layer comprising that can be selectively etched with an etchant that does not etch GaAs is grown on the p type GaAs contact layer. After cooling, the n type layer is selectively etched and removed. In this method, a diffusion potential produced at the p-n junction between the p type GaAs contact layer and the n type layer prevents ionized hydrogen from entering the p type AlGaInP cladding layer during cooling, whereby the activation ratio of Zn atoms in the p type AlGaInP cladding layer is increased. Therefore, even if the Zn/III ratio during the growth of the p type AlGaInP cladding layer is low, a semiconductor laser diode with reduced threshold current and improved temperature characteristics is attained. In addition, since the n type layer grown on the p type GaAs contact layer comprises a semiconductor material that can be selectively etched with an etchant that does not etch GaAs, the etching process of the n type layer is carried out with high controllability without adversely affecting the surface of the p…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.