Epitaxial thallium high temperature superconducting films formed via a nucleation layer
US5508255A · kind A · utility
11Cited by
2References
33Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 5, 1994 |
| Grant date | Apr 16, 1996 |
| Priority date | — |
| Expiry date | Jul 5, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0632
Abstract
The present invention comprises a high quality, epitaxial thallium-based HTS thin film on MgO and other substrates and methods of providing the same. The present invention is achieved using a nucleation layer which provides a template for subsequent growth. Specifically, YBCO and/or YBCO analog films (films having growth characteristics and physical structures analogous to YBCO) are used as nucleation layer(s) on MgO and other substrates to enable the growth of epitaxial thallium-based HTS films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.