Transistors with multiple emitters, and transistors with substantially square base emitter junctions
US5508552A · kind A · utility
10Cited by
15References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1994 |
| Grant date | Apr 16, 1996 |
| Priority date | — |
| Expiry date | Sep 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/138
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor is provided in which the base-emitter junctions do not traverse the base but terminate inside the top surface of the base. The transistor has long emitter perimeter available for current flow and more than two emitter sides (e.g., three sides) available for current flow, which allows obtaining a low base resistance, a low emitter resistance, a low collector resistance, a low base-collector capacitance, and a small size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.