Low temperature plasma film deposition using dielectric chamber as source material
US5510088A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 11, 1992 |
| Grant date | Apr 23, 1996 |
| Priority date | — |
| Expiry date | Jun 11, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32229
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition system utilizes a microwave carrying dielectric member and inner chamber that are both placed within a reaction chamber. The inner chamber is used as a semiconductor source material, which in one particular embodiment is reactive with atomic hydrogen to form volatile hydrides or other gaseous compounds which react to form a desired film composition. The invention is useful for, but not limited to, submicron dimension integrated circuit fabrication, in particular, low temperature, cold wall reactor environments. By constraining the semiconductor production reaction between the inner chamber source material and an integrated circuit substrate, particulate formation is minimized, thereby reducing integrated circuit particle yield losses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.