Supported polycrystalline diamond compact having a cubic boron nitride interlayer for improved physical properties
US5510193A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1994 |
| Grant date | Apr 23, 1996 |
| Priority date | — |
| Expiry date | Oct 13, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12097
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Metal carbide supported polycrystalline diamond (PCD) compacts having improved shear strength and impact resistance properties, and a method for making the same under high temperature/high pressure (HT/HP) processing conditions. A sintered polycrystalline cubic boron nitrite (PCBN) compact interlayer is provided to be bonded at a first interface to a sintered PCD compact layer, and at a second interface to a cemented metal carbide support layer comprising particles of a metal carbide in a binder metal. The supported compact is characterized as having a substantially uniform sweep through of the binder metal from the cemented metal carbide support layer, which sweep through bonds the sintered PCD compact layer to the sintered PCBN interlayer, and the sintered PCBN interlayer to the cemented metal carbide support layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.