Method of making reliable metal leads in high speed LSI semiconductors using thermoconductive layers
US5510293A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 31, 1994 |
| Grant date | Apr 23, 1996 |
| Priority date | — |
| Expiry date | May 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing semiconductor device having metal leads 14 with improved reliability, and device for same, including metal leads 14 on a substrate 12, a low-dielectric constant material 18 at least between the metal leads 14, and thermoconductive insulating layer 22 deposited on the metal leads 14 and the low-dielectric constant material 18. Heat from the metal leads 14 is transferable to the thermoconductive insulating layer 22, and the thermoconductive insulating layer 22 is capable of dissipating the heat. The low-dielectric constant material 18 has a dielectric constant of less than 3.5. An advantage of the invention is to improve reliability of metal leads for circuits using low-dielectric constant materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.