Manufacturable process for tungsten polycide contacts using amorphous silicon
US5510296A · kind A · utility
19Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1995 |
| Grant date | Apr 23, 1996 |
| Priority date | — |
| Expiry date | Apr 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for creating manufacturable polycide contacts, for use in advanced semiconductor designs using images as small as 0.35 .mu.M, has been developed. An amorphous silicon film, is used as an underlay, to assist in the growth of an overlying tungsten silicide layer. The tungsten silicide deposition is performed using tungsten hexafluoride and silane, and in conjunction with the amorphous silicon underlay, results excellent step coverage in the narrow contact hole. A nitrogen anneal, using high flow rates, optimizes the adhesion characteristics of the tungsten polycide structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.