CDTE x-ray detector for use at room temperature
US5510644A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1994 |
| Grant date | Apr 23, 1996 |
| Priority date | — |
| Expiry date | Sep 23, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
An improved x-ray detector in the form of a p-i-n CdTe homojunction device is disclosed. The intrinsic ("i") layer is of high resistivity CdTe, while the n- and p-doped CdTe layers are epitaxially grown in a photo-assisted process in a molecular beam epitaxial apparatus. The n-dopant is conveniently indium, with an indium metal contact. The "i" layer is optionally epitaxially grown in a photo-assisted process. The p-dopant is preferably arsenic. A PAMBE formed mercury telluride contact layer enhances the ohmic contact to the p-layer, and a gold contact is provided to the contact layer. The use of the PAMBE technique facilitates high quality crystal growth and activation of the dopants. The resulting CdTe p-i-n homojunction device has a wide band gap (1.45 eV) essential to room temperature operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.