Acceleration sensor
US5511421A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 8, 1993 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Jul 8, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An acceleration detecting method and an acceleration sensor are disclosed. An inverted potential distribution structure of a metal-insulator-semiconductor type is formed on a semiconductor substrate. The deflection of the weight fixed above the semiconductor substrate with a predetermined space therebetween is detected by the output of the inverted potential distribution structure of a metal-insulator-semiconductor type. The inverted potential distribution structure of a metal-insulator-semiconductor type is turned on when the weight or the electrode on the surface thereof comes close to or comes into contact with the insulation film or the electrode on the semiconductor substrate. The capacitance of the inverted potential distribution structure of a metal-insulator-semiconductor type changes with the deflection of the weight.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.