Process for preparation of stabilized oxide thin layers
US5512152A · kind A · utility
13Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1994 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Jul 15, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for improving the quality of a system of layers deposited on a substrate such as glass is provided, in which, the system of layers have an oxide-based surface layer, in particular n-type semi-conductor oxides such as SnO.sub.x, in which the surface layer is subjected to IR irradiation to provide a stabilization of the layer equivalent to or better than with a 48-hour exposure to the air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.