Method of manufacturing amorphous silicon electrophotographic photosensitive member
US5512510A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1994 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Mar 23, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for stably manufacturing, with improved reproducibility, a good amorphous silicon electrophotographic photosensitive member improved in potential characteristics such as chargeability and photoresponse as well as in the effect of reducing photo-memory and defects which cause spot image defects. A film is formed by plasma CVD on a base of the photosensitive member by using electromagnetic waves having a frequency of 13.56 MHz or higher as power for forming plasma under conditions that the spatial potential of plasma generated by the electromagnetic waves with respect to a base of the photosensitive member is not higher than 120 V and the current density of ions incident upon the base is not lower than 0.4 mA/cm.sup.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.