Contact structure for connecting an electrode to a semiconductor device and a method of forming the same
US5512516A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1994 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Sep 30, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/019
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact structure for connecting a semiconductor device to a wiring electrode includes a semiconductor layer forming a part of the semiconductor device. A first contact layer of reduced resistivity covers a surface of the semiconductor layer. An insulating structure is provided on the first contact layer so as to bury the first contact layer underneath. A penetrating hole is opened through the insulating structure so as to expose a part of the first contact layer. A second contact layer of reduced resistivity is provided on the part of the first contact layer exposed by the penetrating hole. The second contact layer extends from a bottom of the penetrating hole along its side wall. A conductor layer forms the wiring electrode on the second contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.