Method of producing an oxide superconductor single crystal film
US5512541A · kind A · utility
5Cited by
2References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 12, 1994 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Sep 12, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/729
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.