Semiconductor device having bipolar transistor and MOS transistor
US5512772A · kind A · utility
16Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 20, 1994 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Sep 20, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/891
Abstract
A semiconductor device of this invention includes a bipolar transistor and MOS transistors which are formed on the same semiconductor substrate. The bipolar transistor is hetero-bipolar transistor having a hetero junction. The hetero-bipolar transistor is a bipolar transistor of double-hetero structure in which a material used for forming the base region thereof has a band gap narrower than a material used for forming the emitter and collector regions thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.