Blue-green laser diode
US5513199A · kind A · utility
19Cited by
26References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1995 |
| Grant date | Apr 30, 1996 |
| Priority date | — |
| Expiry date | Mar 8, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A II-VI compound semiconductor laser diode includes a plurality of layers of II-VI semiconductor forming a pn junction supported by a single crystal GaAs semiconductor substrate. The layers forming the pn junction include a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and at least a first guiding layer between the first and second cladding layers. A CdZnSe or other II-VI semiconductor quantum well active layer is positioned within the pn junction. Electrical energy is coupled to the laser diode by first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.