Magnetic multilayer film and magnetoresistance element
US5514452A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1993 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Aug 26, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic multilayer film having magnetoresistance (MR) is prepared by depositing at least two magnetic thin films having different coercive forces while interposing a non-magnetic thin film therebetween. A first magnetic thin film having a lower coercive force has a squareness ratio SQ.sub.1 of 0.01-0.5, an anisotropic magnetic field Hk of 1-20 Oe, and a thickness t.sub.1, a second magnetic thin film having a higher coercive force has a squareness ratio SQ.sub.2 of 0.7-1.0 and a thickness t.sub.2 .ltoreq.t.sub.1, and the non-magnetic thin film has a thickness t.sub.3 .ltoreq.200 .ANG.. A first preferred form requires 4 .ANG..ltoreq.t.sub.2 <30 .ANG. and 6 .ANG..ltoreq.t.sub.1 .ltoreq.200 .ANG.. A second preferred form requires 4 .ANG..ltoreq.t.sub.2 <20 .ANG. and 10 .ANG..ltoreq.t.sub.1 <20 .ANG.. A third preferred form requires 4 .ANG..ltoreq.t.sub.2 <30 .ANG. and 6 .ANG..ltoreq.t.sub.1 .ltoreq.40 .ANG.. The magnetic multilayer film has a great MR ratio of more than several percents in a low external magnetic field, a sharp rise at zero magnetic field and high heat resistance. It also has improved hysteresis and MR slope in an applied magnetic field between -10 Oe and +10 Oe. It…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.