Magnetoresistance effect element
US5514469A · kind A · utility
5Cited by
2References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 17, 1995 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Jan 17, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
Abstract
A magnetoresistance effect element having a substrate, a buffer layer of a metal selected from the group consisting of chromium, tungsten, titanium, vanadium, manganese and their alloys which is formed on the substrate, and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on the metal thin layer, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces. This magnetoresistance effect element has an increased magnetoresistance ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.