Method of producing a laser device
US5514619A · kind A · utility
6Cited by
8References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Mar 14, 1994 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Mar 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor microstructure is formed by forming a groove having a surface of a side wall and a surface of a bottom, and depositing a semiconductor layer in the groove so that a width of the semiconductor layer is defined by the surface of the side wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.