Method of producing PN junction device
US5514620A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1994 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Mar 21, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A PN junction device is formed by removing an inert film from a surface of an N type semiconductor layer to expose an active face, then applying a source gas containing an P type impurity component to the active face to form an impurity adsorption film, and thereafter carrying out a solid-phase diffusion of the impurity is carried out from a diffusion source composed of the P type impurity adsorption film into the N type semiconductor layer to form therein a P type semiconductor layer to thereby provide a PN junction. Lastly, a pair of electrodes are connected to the respective semiconductor layers to form the an PN junction device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.