Aluminum alloy electrode for semiconductor devices
US5514909A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1994 |
| Grant date | May 7, 1996 |
| Priority date | — |
| Expiry date | Jul 27, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12736
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.