Method for etching PT film
US5515984A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1995 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Jan 24, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching a Pt film of the present invention includes the steps of: forming an etching resistant film on a Pt film, followed by patterning; etching the Pt film by using as an etching mask the etching resistant film and by using, as an etching gas, a mixed gas containing oxygen gas and chlorine gas or chloride gas, during which layers made of PtCl.sub.x O.sub.y or a mixture containing PtCl.sub.x and PtO.sub.y are formed on side walls of the etching resistant film and the Pt film; and removing the layers made of PtCl.sub.x O.sub.y or the mixture containing PtCl.sub.x and PtO.sub.y with an acid by wet etching after the etching step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.