Analog switch formed of thin film transistor and having reduced leakage current
US5517150A · kind A · utility
18Cited by
18References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 1, 1992 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Oct 1, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13624
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An analog switch includes first and second thin film field effect transistors having their gate connected in common to a control terminal. Current paths of the first and second thin film field effect transistors are connected in series between an input terminal and a capacitive load. A voltage adjusting capacitive element is connected to a common connection between the current paths of the first and second thin film field effect transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.