Semiconductor device for driving heat generator
US5517224A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1993 |
| Grant date | May 14, 1996 |
| Priority date | — |
| Expiry date | Jun 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A semiconductor device has transistors, each transistor having a first conduction type of a first semiconductor region including a first main electrode region, a second conduction type of second semiconductor region including a channel region which is provided in the first semiconductor region, a second main electrode region provided in the second semiconductor region, a gate electrode on the channel region extending through a gate insulating film between the first and second main electrode regions. A portion of the first main electrode region which contacts the channel region is a high-resistance region. The semiconductor device also has buried-type element isolation regions which prevent the occurrence of latch up and bird's beaks in the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.