Hillock-free multilayer metal lines for high performance thin film structures
US5518805A · kind A · utility
27Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1994 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Apr 28, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a novel multilayered structure comprising alternating layers of a base metal and a metal selected from a group of barrier metals. The base metal, in any given layer, is deposited to a thickness less than its critical thickness--a thickness beyond which hillocks are more likely to form for a given temperature. Between each such layer of base metal, a layer of barrier metal is interposed. The intervening layer of barrier metal acts to suppress the formation of hillocks in the base metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.