Method of fabricating multiwavelength infrared focal plane array detector
US5518934A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | May 21, 1996 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
Abstract
A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In.sub.x Ga.sub.1-x As (x.ltoreq.0.53) absorption layers, between each pair of which a plurality of InAs.sub.y P.sub.1-y (y.ltoreq.1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.